The Physics & Modeling of Mosfets
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Book Overview This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 ...
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Book Details Format: Paperback | Pages: 380 | Language: English | Publisher: WORLD SCIENTIFIC PUB CO INC | ISBN: 9813203315
FormatPaperback
Pages380
LanguageEnglish
ISBN9813203315
EAN9789813203310
PublisherWORLD SCIENTIFIC PUB CO INC
Publication Date1970-01-01
AccessoriesNo Accessory
ConditionNew
Product TypeQUALITY PAPERBACK BOOKS
Weight1.12 Pounds
Length9.0 Inches
Width6.0 Inches
Height0.78 Inches
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