Introd to Semiconductor Device Modelling
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Book Overview This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerati...
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Book Details Format: Paperback | Pages: 238 | Language: English | Publisher: WORLD SCIENTIFIC PUB CO INC | ISBN: 981023693X
FormatPaperback
Pages238
LanguageEnglish
ISBN981023693X
EAN9789810236939
PublisherWORLD SCIENTIFIC PUB CO INC
Publication Date1970-01-01
AccessoriesNo Accessory
ConditionNew
Product TypeQUALITY PAPERBACK BOOKS
Weight0.72 Pounds
Length9.0 Inches
Width6.0 Inches
Height0.51 Inches
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