Home › Electronic Materials › Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing
  • Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing by Konstantinos Zekentes book cover
  • Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing by Konstantinos Zekentes book cover
1 2

Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing

by Konstantinos Zekentes

Silicon carbide device processing, from materials to nanostructures

$116.69 USD
$145.87 USD $116.69 USD
Save 20%

Paperback New

Delivery to your door
In stock·Dispatches in 1–2 business days
Standard shipping* from $4.35
Standard shipping transit* 5–8 business days after dispatch

Faster options are available.

Rates and delivery estimates depend on your destination and item quantity. Estimates are informational only; the final shipping method and rate are selected at checkout.
Secure checkout
American Express Apple Pay DiscoverGoogle Pay Mastercard PayPalVisa
30-day eligible returns Returns & refunds policy

AlbakiReads Editorial

Silicon carbide device processing, from materials to nanostructures

This technical volume surveys core processes used to develop silicon carbide (SiC) devices, linking the material’s properties with practical fabrication topics. Its coverage ranges from dielectric processing and ion-implantation doping to plasma etching, then extends to SiC nanostructures and related devices. The listed subjects include thermal oxidation, surface passivation, annealing, etching methods, and forms such as nanowires, nanotubes, and nanopillars. The book is also described as supplementary material for graduate-level courses, giving it a role both as a focused reference across processing topics and as course support.

Good fit for readers who enjoy

  • Graduate students seeking supplementary material on silicon carbide device processing.
  • Researchers and engineers working with semiconductor materials, fabrication, or SiC devices.
  • Readers interested in dielectric processing, ion implantation, plasma etching, or SiC nanostructures.

Themes

Silicon carbide properties and technologySemiconductor device processingDoping and dielectric processingPlasma etchingSilicon carbide nanostructures

Based on publisher information and book metadata.

Book overview

The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.

Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Shipping & returnsShipping options, delivery timing, and our return policy.

In-stock items normally dispatch within 1–2 business days. The ZIP-code estimator on this page is informational only; the final shipping method, price, and availability are confirmed at checkout for your full order.

For the initial delivery estimate we use these transit windows after dispatch: Standard 5–8 business days, Expedited 2–4 business days, and Priority 1–2 business days. Holiday delays are not included.

Eligible items can be returned within 30 days in accordance with our return policy.

Customer reviews

You may also like

View all